unisonic technologies co., ltd 6n60z preliminary power mosfet www.unisonic.com.tw 1 of 6 copyright ? 2012 unisonic technologies co., ltd qw-r502-741.a 6.2 a , 600v n-channel power mosfet ? description the utc 6n60z is a high voltage power mosfet and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. this power mosfet is usually used at high speed switching applications in switching power supplies and adaptors. ? features * r ds(on) = 1.5 ? @v gs = 10v * ultra low gate charge (typical 20 nc ) * low reverse transfer capacitance ( c rss = typical 10pf ) * fast switching capability * avalanche energy tested * improved dv/dt capability, high ruggedness ? symbol 2.drain 3.source 1.gate ? ordering information ordering number package pin assignment packing lead free halogen free 1 2 3 6N60ZL-TF3-T 6n60zg-tf3-t to-220f g d s tube note: pin assignment: g: gate d: drain s: source
6n60z preliminary power mosfet unisonic technologies co., ltd 2 of 6 www.unisonic.com.tw qw-r502-741.a ? absolute maximum ratings (t c = 25c, unless otherwise specified) parameter symbol ratings unit drain-source voltage v dss 600 v gate-source voltage v gss 30 v avalanche current (note 2) i ar 6.2 a continuous drain current i d 6.2 a pulsed drain current (note 2) i dm 24.8 a avalanche energy single pulsed (note 3) e as 440 mj repetitive (note 2) e ar 13 mj peak diode recovery dv/dt (note 4) dv/dt 4.5 ns power dissipation p d 40 w junction temperature t j +150 c operating temperature t opr -55 ~ +150 c storage temperature t stg -55 ~ +150 c notes: 1. absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. 2. repetitive rating : pulse width limited by t j 3. l = 14mh, i as = 6a, v dd = 90v, r g = 25 ? , starting t j = 25c 4. i sd 6.2a, di/dt 200a/ s, v dd bv dss , starting t j = 25c ? thermal data parameter symbol rating unit junction to ambient ja 62.5 c/w junction to case jc 3.2 c/w ? electrical characteristics (t j =25c, unless otherwise specified) parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss v gs = 0v, i d = 250 a 600 v drain-source leakage current i dss v ds = 600v, v gs = 0v 10 a gate- source leakage current forward i gss v gs = 20v, v ds = 0v 5 a reverse v gs = -20v, v ds = 0v -5 a breakdown voltage temperature coefficient bv dss / t j i d =250 a, referenced to 25c 0.53 v/c on characteristics gate threshold voltage v gs ( th ) v ds = v gs , i d = 250 a 2.0 4.0 v static drain-source on-state resistance r ds ( on ) v gs = 10v, i d = 3.1a 1.0 1.5 ? dynamic characteristics input capacitance c iss v ds =25v, v gs =0v, f=1.0 mhz 770 1000 pf output capacitance c oss 95 120 pf reverse transfer capacitance c rss 10 13 pf switching characteristics turn-on delay time t d ( on ) v dd =300v, i d =6.2a, r g =25 ? (note 1, 2) 20 50 ns turn-on rise time t r 70 150 ns turn-off delay time t d ( off ) 40 90 ns turn-off fall time t f 45 100 ns total gate charge q g v ds =480v, i d =6.2a, v gs =10 v (note 1, 2) 20 25 nc gate-source charge q gs 4.9 nc gate-drain charge q gd 9.4 nc
6n60z preliminary power mosfet unisonic technologies co., ltd 3 of 6 www.unisonic.com.tw qw-r502-741.a ? electrical characteristics(cont.) parameter symbol test conditions min typ max unit drain-source diode characteristics and maximum ratings drain-source diode forward voltage v sd v gs = 0 v, i s = 6.2 a 1.4 v maximum continuous drain-source diode forward current i s 6.2 a maximum pulsed drain-source diode forward current i sm 24.8 a reverse recovery time t r r v gs = 0 v, i s = 6.2 a, di f /dt = 100 a/ s (note 1) 290 ns reverse recovery charge q rr 2.35 c notes: 1. pulse test: pulse width 300 s, duty cycle 2% 2. essentially independent of operating temperature
6n60z preliminary power mosfet unisonic technologies co., ltd 4 of 6 www.unisonic.com.tw qw-r502-741.a ? test circuits and waveforms same type as d.u.t. l v dd driver v gs r g - v ds d.u.t. + * dv/dt controlled by r g * i sd controlled by pulse period * d.u.t.-device under test - + peak diode recovery dv/dt test circuit p. w. period d= v gs (driver) i sd (d.u.t.) i fm , body diode forward current di/dt i rm body diode reverse current body diode recovery dv/dt body diode forward voltage drop v dd 10v v ds (d.u.t.) v gs = p.w. period peak diode recovery dv/dt waveforms
6n60z preliminary power mosfet unisonic technologies co., ltd 5 of 6 www.unisonic.com.tw qw-r502-741.a ? test circuits and waveforms (cont.) v ds 90% 10% v gs t d(on) t r t d(off) t f switching test circuit switching waveforms 10v charge q gs q gd q g v gs gate charge test circuit gate charge waveform v dd t p time bv dss i as i d(t) v ds(t) unclamped inductive switching test circuit unclamped inductive switching waveforms
6n60z preliminary power mosfet unisonic technologies co., ltd 6 of 6 www.unisonic.com.tw qw-r502-741.a utc assumes no responsib ility for equipment failures that result from using pr oducts at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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